Title:
METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL WAFER
Document Type and Number:
Japanese Patent JP2023167698
Kind Code:
A
Abstract:
To provide a technique for reducing micro-pipe defects in silicon carbide single crystal developed through crystal growth from seed crystal, in a more cost-effective and favorable manner.SOLUTION: A method for producing a silicon carbide single crystal includes sublimating powdery solid raw material (4) and recrystallizing it on a growth surface (52), which is one surface of a seed crystal (5), thus growing a growth crystal (6) on the growth surface. On the growth surface of the seed crystal, a strain layer (54) is formed, which is a machined altered layer that has been flattened using a grindstone. The seed crystal has an off-angle (θ) of 4 degrees or more. The strain layer is provided at least in a region with micro-pipe defects (MP). The strain layer has a surface roughness Ra of more than 1 nm.SELECTED DRAWING: Figure 3
Inventors:
TAKAHANE HIDETAKA
YAMADA MASANORI
YAMADA MASANORI
Application Number:
JP2022079068A
Publication Date:
November 24, 2023
Filing Date:
May 12, 2022
Export Citation:
Assignee:
DENSO CORP
International Classes:
C30B23/06; C30B29/36
Attorney, Agent or Firm:
Patent Attorney Corporation Yuuai Patent Office
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