To provide a silicon carbide substrate manufacturing method that can prevent a fluid from passing through the silicon carbide substrate and leaking out.
Each of first and second support target portions 11 and 12 formed of silicon carbide and a support portion 30 formed of silicon carbide are arranged so as to face each other and form a gap GP between the first and second support target portions 11 and 12. The silicon carbide of he support portion 30 is sublimated and recrystallized, whereby the support portion 30 is bonded to each of the first and second single crystal substrates 11 and 12. At this time, a through hole TH is formed in the support portion 30 so as to intercommunicate with the gap GP, thereby forming a path PT along which a fluid can pass through the gap GP and the through hole TH. By closing the path PT, the fluid can be prevented from passing through the silicon carbide substrate and leaking out.
MASUDA TAKEYOSHI
SASAKI MAKOTO
HARADA MAKOTO
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Masayuki Sakai
Nobuo Arakawa
Masato Sasaki