Title:
SILICON-CONTAINING POLYMER COMPOUND, RESIST MATERIAL AND METHOD OF PATTERN FORMATION
Document Type and Number:
Japanese Patent JP3912512
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a new polymer silicone compound which is preferably usable not only as a material for a two-layer resist method, having high sensitivity and high resolution, especially suitable for forming a pattern with a high aspect ratio but also as a base polymer for a chemical amplification positive type resist material for forming a pattern having excellent heat resistance and the chemical amplification positive type resist material comprising the compound as the base polymer, and to provide a method of pattern formation.
SOLUTION: The silicon-containing polymer compound contains a repeating unit of three components represented by general formula (1) (R1, R2 and R3 are each hydrogen atom, a 1-10C straight-chain, branched-chain or cyclic alkyl group; R4, R5 and R6 are mutually the same or different and are each hydrogen atom, a 1-20C alkyl group, a haloalkyl group or a 6-20C aryl group; R7 is a 4-20C straight-chain, branched-chain or cyclic alkyl group; n is 1-5; p, q and r are each a positive number). The resist material is sensitive to high-energy rays and has excellent sensitivity, resolution and resistance to oxygen plasma etching at ≤300 nm wavelength.
Inventors:
Takanobu Takeda
Jun Hatakeyama
Toshinobu Ishihara
Jun Hatakeyama
Toshinobu Ishihara
Application Number:
JP2002192947A
Publication Date:
May 09, 2007
Filing Date:
July 02, 2002
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
C08F230/08; C08F222/06; C08F232/08; C08G77/442; G03F7/039; G03F7/075; H01L21/027; (IPC1-7): C08F230/08; C08F222/06; C08F232/08; G03F7/039; H01L21/027
Domestic Patent References:
| JP2001233920A | ||||
| JP2001114835A | ||||
| JP1101312A | ||||
| JP1110513A | ||||
| JP9230600A |
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Saori Shigematsu
Katsunari Kobayashi