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Title:
活性化エネルギーの低いケイ素含有レジスト・システム
Document Type and Number:
Japanese Patent JP4530368
Kind Code:
B2
Abstract:
Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.

Inventors:
Hwang, Woo, Song
Allen, Robert, Dee
Angelo Paulos, Marie
Kwon Lernie W
Surya Kumarang, Ratnam
Application Number:
JP2006536874A
Publication Date:
August 25, 2010
Filing Date:
October 22, 2004
Export Citation:
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Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
G03F7/039; G03C1/76; G03F7/004; G03F7/075; G03F7/11; H01L21/027; G03F
Domestic Patent References:
JP2002268226A
JP2002268227A
JP2001305737A
JP2002338690A
JP2002082437A
Attorney, Agent or Firm:
Takeshi Ueno
Tasaichi Tanae
Yoshihiro City
Hiroshi Sakaguchi