Title:
シリコンエピタキシャルウエーハ及びその製造方法
Document Type and Number:
Japanese Patent JP7415827
Kind Code:
B2
Abstract:
To provide a silicon epitaxial wafer with a surface layer that becomes the active layer of a device whose strength is improved by the implantation of carbon ions and whose deterioration of electrical characteristics due to carbon ions is suppressed.SOLUTION: A silicon epitaxial wafer has an epitaxial layer on the surface of a silicon single-crystal substrate, and the surface layer, which is the device active layer of the epitaxial layer, has been implanted with carbon ions at a dose of between 1×1012atoms/cm2 and 1×1013atoms/cm2.SELECTED DRAWING: Figure 1
Inventors:
Yasushi Mizusawa
Application Number:
JP2020114108A
Publication Date:
January 17, 2024
Filing Date:
July 01, 2020
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
H01L21/265; C30B25/20; C30B29/06; C30B31/22
Domestic Patent References:
| JP60074536A | ||||
| JP2019186449A | ||||
| JP2010062529A | ||||
| JP2014099472A |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi