Title:
シリコンエッチング液
Document Type and Number:
Japanese Patent JP7305679
Kind Code:
B2
Abstract:
An etching solution contains a quaternary ammonium compound as a main component, by which an etching rate for silicon is improved, no adhered substances are formed on an etching surface during etching, and the etching rate does not decrease even after continuous use for a long time. The silicon etching solution contains a phenol compound represented by the following Formula (1), a quaternary ammonium compound, and water, and has a pH of 12.5 or more.wherein R1 is a hydrogen atom, a hydroxy group, an alkyl group, an alkoxy group, or an amino group. R2 is a hydrogen atom, a hydroxy group, an alkoxy group, or an amino group. R1 and R2 are not hydrogen atoms at the same time. When R1 is a hydrogen atom, R2 is not a hydroxy group. When R1 is an alkyl group or a hydroxy group, R2 is not a hydrogen atom.
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Inventors:
Manami Okishio
Seiji Higashino
Yoshitaka Seike
Seiji Higashino
Yoshitaka Seike
Application Number:
JP2020561325A
Publication Date:
July 10, 2023
Filing Date:
December 09, 2019
Export Citation:
Assignee:
Tokuyama Corporation
International Classes:
H01L21/308; H01L21/306
Domestic Patent References:
| JP2017108122A | ||||
| JP2007525836A | ||||
| JP2002134456A | ||||
| JP2016127293A | ||||
| JP2002050595A | ||||
| JP2012033561A | ||||
| JP6188236A | ||||
| JP8031452B2 |
Foreign References:
| US20070175862 | ||||
| CN102644121A | ||||
| US20180211830 |
Attorney, Agent or Firm:
Maeda Suzuki International Patent Attorneys Corporation
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