Title:
SILICON ETCHING METHOD, AND MANUFACTURE OF CCD SOLID IMAGE PICKUP DEVICE USING THIS METHOD
Document Type and Number:
Japanese Patent JP3419590
Kind Code:
B2
Abstract:
PURPOSE: To lessen the decrease of the film thickness of a base insulating film by performing etching until the insulating layer under a silicon film is just exposed, and further, performing etching in condition that high frequency power is decreased, and further, performing etching in condition that high frequency power is increased.
CONSTITUTION: At the first step, the step is finished at the point of time of just etching when a polysilicon film 10 is etched off. Next, at the second step, high-frequency power is decreased. At the third step, high frequency power is increased more than that at the second step. This way, the accelerated etching of a silicon nitride film 9 can be prevented by providing the second step where the high-frequency power is decreased as compared with the first step while silicon halide generated by the etching of the polysilicon film 10 remains in large quantity in plasma.
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Inventors:
Kazuyoshi Mizushima
Akira Tsukamoto
Akira Tsukamoto
Application Number:
JP13154895A
Publication Date:
June 23, 2003
Filing Date:
May 30, 1995
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
C30B29/06; C23F4/00; H01L21/302; H01L21/3065; H01L27/148; (IPC1-7): H01L21/3065; C23F4/00; C30B29/06; H01L27/148
Domestic Patent References:
| JP396231A | ||||
| JP6177091A | ||||
| JP5182935A | ||||
| JP6151793A | ||||
| JP5267249A |
Attorney, Agent or Firm:
Akio Miyai