Title:
シリコンエッチング液、シリコンエッチング方法、及びシリコンフィン構造体の製造方法
Document Type and Number:
Japanese Patent JP7340969
Kind Code:
B2
Abstract:
A silicon etching solution including a component which is a quaternary ammonium hydroxide represented by Formula (A-1), and a component which is a nonionic surfactant, in which an HLB value of the quaternary ammonium hydroxide is in a range of 12 to 15; in Formula (A-1), R1 to R4 each independently represent a monovalent hydrocarbon group, and the total number of carbon atoms contained in R1 to R4 is 10 or greater
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Inventors:
Zhong Ming proverb
Akira Takahama
Akira Takahama
Application Number:
JP2019121824A
Publication Date:
September 08, 2023
Filing Date:
June 28, 2019
Export Citation:
Assignee:
Tokyo Ohka Kogyo Co., Ltd.
International Classes:
H01L21/308
Domestic Patent References:
| JP2019050364A | ||||
| JP2005529485A |
Attorney, Agent or Firm:
Sumio Tanai
Masahisa Matsumoto
Ryu Miyamoto
Masato Iida
Masahisa Matsumoto
Ryu Miyamoto
Masato Iida
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