Title:
シリコン膜の形成方法および形成装置
Document Type and Number:
Japanese Patent JP6902958
Kind Code:
B2
Abstract:
A method of forming a silicon film in a recess formed in a target substrate includes: preparing a target substrate having a recess in which a plurality of different bases is exposed; forming an atomic layer seed on at least an inner surface of the recess by sequentially supplying a raw material gas adapted to the plurality of different bases and a reaction gas reacting with the raw material gas to the target substrate one or more times while heating the target substrate to a first temperature; and forming a silicon film on a surface of the atomic layer seed so as to fill the recess by supplying a first silicon raw material gas to the target substrate while heating the target substrate to a second temperature.
Inventors:
High Satoshi Satoshi
Hiroyuki Hayashi
Cai Shulin
Hiroyuki Hayashi
Cai Shulin
Application Number:
JP2017149866A
Publication Date:
July 14, 2021
Filing Date:
August 02, 2017
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/205; C23C16/24; H01L21/28; H01L21/285
Domestic Patent References:
| JP2012138501A | ||||
| JP2009016860A |
Attorney, Agent or Firm:
Hiroshi Takayama