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Title:
SILICON NITRIDE SINTERED COMPACT, CUTTING TOOL, DEVICE FOR CUTTING WORK AND CUTTING METHOD
Document Type and Number:
Japanese Patent JP2009173508
Kind Code:
A
Abstract:

To provide a silicon nitride sintered compact where wear resistance and chipping resistance are improved, a cutting tool, a device for cutting works and a cutting method.

The silicon nitride sintered compact has a crystal phase being mainly silicon nitride crystals and an amorphous grain boundary phase containing lanthanum, aluminum, magnesium, silicon and oxygen and existing in the grain boundary of the silicon nitride crystals. The content of magnesium in a face at a depth of 0.3 mm from the surface of the sintered compact is 1.3 mass% or less in terms of an oxide. The content of magnesium in a face at a depth of 0.3 mm from the surface of the sintered compact is less than that in a face at a depth of 1 mm from the surface of the sintered compact. The difference of the content of magnesium between in a face at a depth of 0.3 mm and in a face at a depth of 1 mm from the surface of the sintered compact is 0.5 mass% or less in terms of an oxide.


Inventors:
FUKUTOME TAKEO
TATENO SHUICHI
YOSHIMITSU HIROSHI
WATANABE TAKASHI
NAKAOKA TATSUYUKI
Application Number:
JP2008017247A
Publication Date:
August 06, 2009
Filing Date:
January 29, 2008
Export Citation:
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Assignee:
KYOCERA CORP
International Classes:
C04B35/584; B23B27/14; B23C5/16
Domestic Patent References:
JPH046159A1992-01-10
JP2000351673A2000-12-19
JP2002012474A2002-01-15