Title:
SILICON PENETRATION VIA FORMATION PRODUCTION MANAGEMENT SYSTEM, SILICON PENETRATION VIA PRODUCTION MANAGEMENT METHOD, RECORDING MEDIUM, AND PROGRAM
Document Type and Number:
Japanese Patent JP2018087699
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a system and a method of a silicon penetration via production management, a recording medium, and a program capable of performing a non-destructive inspection of a TSV.SOLUTION: A silicon penetration via formation production management system includes: a X ray inspection device 10 for obtaining an image showing a shape of a silicon penetration via formed on a silicon substrate and a state of the plating film inside the silicon penetration via; a void defect classification part 21 for determining the presence or absence of a void defect inside the plating film from the obtained image and classifying the void defect into a predetermined plurality of detect patterns when the void defect is detected; a defect processing specifying part 22 for specifying defect processing which is a cause of the void defect according to the classified predetermined defect pattern; and a control part 23 for instructing a processing device which performs change processing for correcting the defect processing and performs the defect processing.SELECTED DRAWING: Figure 1
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Inventors:
UMEHARA YASUTOSHI
NAMIOKA ICHIRO
NAMIOKA ICHIRO
Application Number:
JP2015074317A
Publication Date:
June 07, 2018
Filing Date:
March 31, 2015
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
G01N23/04; G01B15/00; G01B15/02; G01B15/04; G01N23/18; G05B19/418
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito