Title:
SILICON PLANAR TYPE SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS5383470
Kind Code:
A
Abstract:
PURPOSE: To obtain a Si planar type element of a high dielectric strength by using an n type Si substrate of a specific resistance value larger than 30 to 40Ωcm being hitherto considered threshold values.
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Inventors:
KAMIJIYOU HIROSHI
Application Number:
JP15945876A
Publication Date:
July 22, 1978
Filing Date:
December 28, 1976
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L29/73; H01L21/331; H01L29/06; H01L29/861; (IPC1-7): H01L29/06; H01L29/91
Domestic Patent References:
| JPS50113175A | 1975-09-05 | |||
| JP45036049A |
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