Title:
SILICON-POLYMER DIELECTRIC FILM ON SEMICONDUCTOR SUBSTRATE AND METHOD FOR FORMING THE FILM
Document Type and Number:
Japanese Patent JP3814797
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method and materials for forming a dielectric film having a low dielectric-constant, high heat-resistance, superior adsorption-proof, and good adhesion.
SOLUTION: The method for forming a silicon-polymer dielectric film having a low dielectric-constant, high heat-resistance, and superior adsorption-proof, is applied to a plasma CVD apparatus. The first process is to vaporize a silicon- based hydrocarbon compound which is expressed by, general formula α0βCxHy (α=3, β =3 or 4, x and y integers), and then introduce the vaporized compound into the reaction chamber of the plasma CVD apparatus. The next process is to introduce an additional gas into the reaction chamber. The residence time of the material gas can be elongated by reducing a sum of flow of the reaction gas using a method for forming a silicon-compound film having continuously-porous structure with low dielectric-constant.
Inventors:
Nobuo Matsuki
Application Number:
JP2001320069A
Publication Date:
August 30, 2006
Filing Date:
October 18, 2001
Export Citation:
Assignee:
Japan ASM Co., Ltd.
International Classes:
C23C14/00; H01L21/316; H01L21/31; H01L21/312; (IPC1-7): H01L21/316; C23C14/00; H01L21/31; H01L21/312
Domestic Patent References:
| JP11288931A | ||||
| JP8031815A | ||||
| JP9227687A | ||||
| JP7053751A |
Attorney, Agent or Firm:
Sumio Takeuchi
Akira Hori
Akira Hori
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