Title:
シリコン単結晶製造方法
Document Type and Number:
Japanese Patent JP4862290
Kind Code:
B2
Abstract:
This apparatus for manufacturing a semiconductor single crystal includes: a crucible; a heater; a crucible driving unit; a chamber for housing the crucible and the heater; and a hydrogen mixed gas supplying device for supplying into the chamber a hydrogen mixed gas including an inert gas in admixture with a hydrogen-containing gas that contains hydrogen atoms, wherein the hydrogen mixed gas supplying device includes: a hydrogen-containing gas supply unit; an inert gas supply unit; a hydrogen-containing gas flow rate controller; an inert gas flow rate controller; and a gas mixing unit for uniformly mixing together the hydrogen-containing gas and the inert gas so as to form a hydrogen mixed gas.
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Inventors:
Wataru Sugimura
Masataka Horai
Toshiaki Ono
Masataka Horai
Toshiaki Ono
Application Number:
JP2005180001A
Publication Date:
January 25, 2012
Filing Date:
June 20, 2005
Export Citation:
Assignee:
Sumco inc.
International Classes:
C30B29/06; C30B15/20
Domestic Patent References:
| JP11189495A | ||||
| JP2004217460A | ||||
| JP2000335995A | ||||
| JP2002029884A | ||||
| JP2003321294A | ||||
| JP2001518443A |
Foreign References:
| US4400232 | ||||
| WO2004083496A1 |
Attorney, Agent or Firm:
Masatake Shiga
Tadashi Takahashi
Masakazu Aoyama
Yasuhiko Murayama
Tadashi Takahashi
Masakazu Aoyama
Yasuhiko Murayama