SILICON SINGLE CRYSTAL AND METHOD OF PRODUCING THE SAME

Title:

SILICON SINGLE CRYSTAL AND METHOD OF PRODUCING THE SAME

Document Type and Number:

Japanese Patent JP2003238290

Kind Code:

A

Abstract:

To provide an advantageous method for producing a silicon single crystal having a <113> orientation.

The method for producing the silicon single crystal with the <113> orientation comprises pulling the silicon single crystal by a Czochralski method in the form of an ingot which is suspended from a neck part and has two conical end parts, one of which is connected to the neck part.

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Inventors:

DANTZ DIRK
VON AMMON WILFRIED
ZEMKE DIRK
SEGIETH FRANZ

Application Number:

JP2003027533A

Publication Date:

August 27, 2003

Filing Date:

February 04, 2003

Export Citation:

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Assignee:

WACKER SILTRONIC HALBLEITERMAT

International Classes:

C30B15/00; C30B15/36; C30B29/06; (IPC1-7): C30B29/06; C30B15/36

Attorney, Agent or Firm:

Toshio Yano (4 outside)

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