Title:
SILICON WAFER, SOI WAFER, AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2023054965
Kind Code:
A
Abstract:
To provide a silicon wafer and a SOI wafer in which harmonic waves are reduced in a wafer obtained by forming a polysilicon film on a silicon single crystal substrate having resistivity of 10 Ω cm or more and less than 500 Ω cm.SOLUTION: A silicon wafer includes a polysilicon film with a carbon concentration of 2×1019 to 2.5×1022 atoms/cm3 on a silicon single crystal substrate with resistivity of 10 Ω cm or more and less than 500 Ω cm, and an SOI wafer has a structure in which a polycrystalline silicon containing carbon of 2×1019 to 2.5×1022 atoms/cm3, a dielectric layer, and a silicon single crystal film are arranged on a silicon single crystal substrate with resistivity of 10 Ω cm or more and less than 500 Ω cm in this order.SELECTED DRAWING: Figure 1
Inventors:
MIZUSAWA YASUSHI
SUZUKI ATSUSHI
MATSUBARA HISAKI
ABE TATSUO
OTSUKI TAKESHI
SUZUKI ATSUSHI
MATSUBARA HISAKI
ABE TATSUO
OTSUKI TAKESHI
Application Number:
JP2021164013A
Publication Date:
April 17, 2023
Filing Date:
October 05, 2021
Export Citation:
Assignee:
SHINETSU HANDOTAI KK
International Classes:
H01L21/02; H01L21/205
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toru Otsuka
Toshihiro Kobayashi
Toru Otsuka
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