To provide a silicon wafer that exhibits gettering effect, without generating slip dislocations.

A thermal treatment is performed. Consequently, a layer having zero light-scattering by a 90 light-scattering method after slicing a silicon single crystal ingot is formed in a region with the depth of 25 m or larger and smaller than 100 m from the surface of the wafer, and also a layer, where a light scattering defect density by the 90 light-scattering method is 1108/cm3 or larger, is formed, in a region at a depth of 100 m or larger from the surface of the wafer.