To surely provide a DZ-IG wafer having a DZ layer with high quality and capable of maintaining high resistivity even if a device is thermally processed when manufactured.
In the method for manufacturing the silicon wafer, a monocrystal silicon ingot having resistivity of 100 Ω.cm or more and an initial lattice oxygen density of 10-25 ppma and doped with nitrogen, is grown by Czochralski method. The monocrystal silicon ingot is processed to obtain wafers. The wafer is thermally processed and a remaining lattice oxygen density in the wafer is 8 ppma or less. The method for manufacturing the silicon wafer grows the monocrystal silicon ingot having resistivity of 100 Ω.cm or more and an initial lattice oxygen density of 10-25 ppma and doped with nitrogen by Czochralski method, processes the monocrystal silicon ingot to obtain the wafers and forms a oxygen deposition layer in a wafer bulk by thermally processing the wafer. The silicon wafer is manufactured by the method.
MAGARI TAKEMINE
KOBAYASHI NORIHIRO
Next Patent: HEAT TREATMENT APPARATUS