To provide a surface processing method capable of realizing hydrogen termination of a wafer surface without deteriorating the flatness of the wafer surface.
A hydrogen/oxygen generation apparatus consists of a water electrolysis cell 10 wherein a solid polymeric electrolyte film 1 is used as a diaphragm, an anode 4 and a cathode 5 are separated from each other by the film 1, pure water is electrolyzed while supplying pure water to the anode 4, and oxygen gas and hydrogen gas are generated from the anode 4 and the cathode 5, respectively. Using this apparatus, a silicon wafer 6 serving as a cathode-side feeder is contacted with the cathode part 5 of the solid polymeric electrolyte film 1 and the silicon wafer 6 is electrolyzed. Then, hydrogen radical is contacted with the surface of the silicon wafer, thereby realizing hydrogen termination of the silicon wafer surface, that is, inactivating the silicon wafer surface.
SASAKI TAKASHI
ODA HIROMICHI
HIRAI SEIJI
KOBAYASHI HIROKO
NAGAO MAMORU
HARADA MICHIYUKI
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