Title:
SIMULATION APPARATUS AND SIMULATION METHOD
Document Type and Number:
Japanese Patent JP3877611
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a simulation apparatus performing the simulation with regard to grating temperature regardless of grid intervals.
SOLUTION: The simulation apparatus comprises an input section 11, a preparation section 12, a calculation section 13, and an output section 14. A virtual transient region 5 is set at a contact portion between a semiconductor and a metal. The thermal conductivity within the transient region 5 and the power consumption due to the contact resistance within the transient region 5 are calculated to solve the thermal conductance equation by using the calculation result. Therefore, even if the grid intervals which are set at both end surfaces of the transient region 5 change, the grating temperature becomes unvaried. Accordingly, the tolerance of the semiconductor device to heat can be predicted with a high degree of accuracy.
Inventors:
Kazuya Matsuzawa
Application Number:
JP2002054673A
Publication Date:
February 07, 2007
Filing Date:
February 28, 2002
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
G06F17/50; H01L21/336; H01L29/00; H01L29/78; (IPC1-7): G06F17/50; H01L21/336; H01L29/00; H01L29/78
Other References:
Matsuzawa, K. et al.,Simulation of self-heating and contact resistance influences on nMOSFETs,SISPAD 2000,2000年 9月 8日,p.237-240
Attorney, Agent or Firm:
Kenji Yoshitake
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki
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