Title:
SINGLE-ARRAY DUAL PORT READING/WRITING RAM
Document Type and Number:
Japanese Patent JPS61165883
Kind Code:
A
Abstract:
@ A single-array memory employs a novel storage cell providing dual read/write access via either an «A»-side or a «B»- side. The storage cell uses a unique circuit in which read current is borrowed during writing into the cell. Asymmetrical read/write delay circuitry is provided to avoid overwriting the contents of a storage cell during the read-to-write transition. Row-selection decoders use Schottky-clamping diodes in a way which provide an equivalent oscillation-damping capacitance at the base of the selected-row driver transistor. The single-array memory can be advantageously used as part of a single-chip VLSI four-port register file permitting simultaneous reading and/or writing of registers from any of two read ports or two write ports, respectively. Unidirectional busses connect each storage cell to each of the four ports.
Inventors:
MAIKERU AREN
RII HAASHIYU
RII HAASHIYU
Application Number:
JP24377885A
Publication Date:
July 26, 1986
Filing Date:
October 30, 1985
Export Citation:
Assignee:
ADVANCED MICRO DEVICES INC
International Classes:
G11C7/00; G11C8/16; G11C11/401; (IPC1-7): G11C7/00; G11C11/34
Attorney, Agent or Firm:
Kuro Fukami