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Title:
SINGLE CHARGE TUNNEL DEVICE
Document Type and Number:
Japanese Patent JP2007227879
Kind Code:
A
Abstract:

To provide a single charge tunnel device which can be used as a nonvolatile memory device, particularly a single electron transistor.

The single charge tunnel made of a ferromagnetic material is controlled not only by applying a gate voltage in an electric mode like the prior art, but also applying a rotationally oriented magnetic field in a magnetic mode. In other words, the chemical potential of the ferromagnetic material is changed by applying the oriented magnetic field and a Coulomb blockade anisotropic magnetoresistance effect is produced. The resultant resistance and change of the device are used for logical 1 and 0 writing signals, and for switching the signals. A nonvolatile memory effect is exerted by the hysteresis of the magnetic mode.

COPYRIGHT: (C)2007,JPO&INPIT


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Inventors:
WUNDERLICH JOERG
WILLIAMS DAVID
JUNGWIRTH TOMAS
IRVINE ANDREW
GALLAGHER BRYAN
Application Number:
JP2006295050A
Publication Date:
September 06, 2007
Filing Date:
October 31, 2006
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
H01L29/82; H01L27/10; H01L29/66; H01L29/78; H01L43/08
Domestic Patent References:
JP2000332317A2000-11-30
JPH11238924A1999-08-31
JPH08506214A1996-07-02
JP2004022904A2004-01-22
JP2005135462A2005-05-26
JP2000332317A2000-11-30
Attorney, Agent or Firm:
Hideto Asamura
Hajime Asamura



 
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