Title:
SINGLE CRYSTAL GROWTH APPARATUS
Document Type and Number:
Japanese Patent JP2019052067
Kind Code:
A
Abstract:
To provide a single crystal growth apparatus that can keep axial symmetry of temperature distribution in a crucible and improve a life of a refractory box arranged around the crucible.SOLUTION: A single crystal growth apparatus 10 for growing an oxide single crystal includes a crucible 12 for housing a raw material 18 of the single crystal, a rotatable pulling-up axis 16 that has a seed crystal 1 fitted at the tip and moves up and down in the crucible 12, a work coil 15 that is installed outside the crucible 12 and subjects the crucible 12 to induction heating, a refractory box 14 arranged around the crucible 12, and zirconia bubbles 19 packed in a gap between the crucible 12 and the refractory box 14. The packing density of the zirconia bubbles 19 is 1.8 g/cmor higher and 2.2 g/cmor lower.SELECTED DRAWING: Figure 1
Inventors:
KAJIGAYA TOMIO
Application Number:
JP2017178117A
Publication Date:
April 04, 2019
Filing Date:
September 15, 2017
Export Citation:
Assignee:
SUMITOMO METAL MINING CO
International Classes:
C30B15/00; C30B29/30; F27B14/08
Domestic Patent References:
| JPH11189487A | 1999-07-13 | |||
| JPH01226732A | 1989-09-11 | |||
| JPH04124073A | 1992-04-24 | |||
| JP2003165796A | 2003-06-10 | |||
| JP2009007203A | 2009-01-15 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito