Title:
単結晶成長装置
Document Type and Number:
Japanese Patent JP6872346
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a single crystal growing apparatus capable of enhancing production efficiency.SOLUTION: (1) A single crystal growing apparatus 102 includes a plurality of crucibles 10 to be rotated and revolved and heating means 20 surrounding the plurality of crucibles 10. The plurality of crucibles 10 forms a crystal growth space having a single crystal installation part and a raw material storage part in each inside. (2) The heating means includes a coil 21 surrounding the plurality of crucibles 10 and a heating element 22 arranged between the plurality of crucibles 10 and the coil 21. (3) A heating element 22 is annularly arranged around the revolution axis C1 of the plurality of crucibles 10. (4) A second heating element 40 stands at the revolution axis C1 of the plurality of crucibles 10. (5) A distance between the rotation axis C2 of each crucible 10 and the revolution axis C1 of the plurality of crucibles 10 is equal.SELECTED DRAWING: Figure 5
Inventors:
Youhei Fujikawa
Takataka Hidetaka
Takataka Hidetaka
Application Number:
JP2016209266A
Publication Date:
May 19, 2021
Filing Date:
October 26, 2016
Export Citation:
Assignee:
昭和電工株式会社
株式会社デンソー
株式会社デンソー
International Classes:
C30B23/06; C30B29/36; F27B14/10; F27B14/14
Domestic Patent References:
| JP2011178626A | ||||
| JP51066498A | ||||
| JP2010037189A | ||||
| JP2011213563A |
Foreign References:
| WO2016084492A1 |
Attorney, Agent or Firm:
Shu Oikawa
Norihiko Ara
Tomoo Katsumata
Masatake Shiga
Suzuki Mitsuyoshi
Norihiko Ara
Tomoo Katsumata
Masatake Shiga
Suzuki Mitsuyoshi