Title:
SINGLE CRYSTAL GROWTH METHOD, TITANIUM PHOSPHATEPOTASSIUM SINGLE CRYSTAL AND ITS LIKE COMPOUND
Document Type and Number:
Japanese Patent JP3037829
Kind Code:
B2
Abstract:
PURPOSE: To grow a high-quality single crystal without any defect in good yield, to make an SHG element using the single crystal as a nonlinear optical element highly efficient and to attain its operational stability.
CONSTITUTION: A crystal formed on the surface of a molten material by lowering the temp. of the molten material is used as a seed crystal to grow a single crystal under the molten material. In this method, a seed crystal, a crystal worked in the facial direction almost parallel to the easy-to-grow face of the crystal so that at least a part of the forming face or cut and polished face of the seed crystal to be dipped in the molten material is made almost analogous to the grown crystal or the small piece of the grown crystal are used.
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Inventors:
Yasunori Furukawa
Masazumi Sato
Kohei Ito
Masazumi Sato
Kohei Ito
Application Number:
JP16258092A
Publication Date:
May 08, 2000
Filing Date:
June 22, 1992
Export Citation:
Assignee:
Hitachi Metals Co., Ltd.
International Classes:
C30B17/00; C30B29/14; (IPC1-7): C30B17/00; C30B29/14
Domestic Patent References:
| JP5238878A | ||||
| JP6081096A |