SINGLE CRYSTAL LIFTING DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL

Japanese Patent JP2021172549

A

To provide a single crystal lifting device capable of minimizing rotation of a cramp even if force turning a heater is applied owing to a magnetic field.SOLUTION: A single crystal lifting device comprising a lifting furnace in which a heater and a crucible housing a semiconductor raw material are arranged, and a magnetic field generation device which has a magnet coil, includes: an electrode 6 for supplying electric power to the heater; a columnar electrode adapter 5 connected to the electrode 6; a clamp 4 connecting the electrode adapter 5 and terminals of the heater; and a connector 12 connecting the electrode adapter 5 and clamp 4. The electrode adapter 5 has at least one recessed part 17 on an outer circumferential surface of a connection end 13 on the side of the clamp 4, the clamp 4 having at least one through hole 16 communicating with the recessed part 17, and further has at least one rotation preventive fixture 15 inserted into the recessed part 17 through the through hole 16.SELECTED DRAWING: Figure 1

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KAMATA HIROYUKI
SUGAWARA TAKAYO

JP2020076884A

November 01, 2021

April 23, 2020

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SHINETSU HANDOTAI KK

C30B15/00; C30B29/06

JP2015086088A	2015-05-07
JPH09263491A	1997-10-07
JP2008260671A	2008-10-30
JP2003277186A	2003-10-02
JP2005069155A	2005-03-17

Mikio Yoshimiya
Toshihiro Kobayashi

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