To provide a single crystal pulling device capable of reducing residual stress in a single crystal obtained by pulling.

The single crystal pulling device includes: a crucible 20 including a bottom 21 and a wall 22 standing from the peripheral edge of the bottom 21 and housing an alumina melt; a heating coil 30 wound outside the wall 22 of the crucible 20 and induction-heating the wall 22 by the supply of an alternating current; a pulling rod 40 disposed above the crucible 20 and pulling up a sapphire ingot 200 from the alumina melt housed in the crucible 20; and a cylindrical heater 16 disposed below the bottom 21 of the crucible 20 and below and inside the sapphire ingot 200 pulled up by the pulling rod 40, and induction-heated by the heating coil 30 to heat the center portion of the bottom 21 of the crucible 20.