Title:
METHOD FOR PROCESSING SINGLE CRYSTAL SILICON WAFER
Document Type and Number:
Japanese Patent JP2023034254
Kind Code:
A
Abstract:
To provide a wafer processing method capable of shortening processing time and reducing the probability of device breakage when a peeling layer is formed inside a wafer and then the wafer is separated with the peeling layer as a separation starting point.SOLUTION: A single crystal silicon wafer manufactured so that a specific crystal plane included in a crystal plane {100} (for example, crystal plane (100)) is exposed on each of the front and back surfaces of the wafer is irradiated with a laser beam along a first direction that is parallel to the specific crystal plane and forms an angle of 5° or less with respect to a specific crystal orientation included in a crystal orientation<100>(for example, crystal orientation [010]), thereby forming a peeling layer serving as a separation starting point between the front surface side and back surface side of the single crystal silicon wafer.SELECTED DRAWING: Figure 7
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Inventors:
IGA YUTO
HIRATA KAZUYA
HIROZAWA SHUNICHIRO
HIRATA KAZUYA
HIROZAWA SHUNICHIRO
Application Number:
JP2021140404A
Publication Date:
March 13, 2023
Filing Date:
August 30, 2021
Export Citation:
Assignee:
DISCO ABRASIVE SYSTEMS LTD
International Classes:
H01L21/02; B23K26/53; H01L21/304
Attorney, Agent or Firm:
Matsumoto
Tomohiro Okamoto
Takahiro Kasahara
Hideaki Okamoto
Takayuki Okano
Toshikazu Imato
Tomohiro Okamoto
Takahiro Kasahara
Hideaki Okamoto
Takayuki Okano
Toshikazu Imato