Title:
SINGLE-POLE DOUBLE-THROW SEMICONDUCTOR SWITCH INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JP3913326
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To eliminate an electromagnetic coupling between two field-effect transistors, without ignoring the regulation on mounting on a semiconductor substrate.
SOLUTION: A shielding wire 21 constituted of a conductor member is arranged between a first field-effect transistor 1 and a second field-effect transistor 2. One end is connected to a ground terminal 20, and the shielding wire 21 is set to a grounded state via the connection terminal 20. Even if a high-frequency signal passing through the field-effect transistor 1 or 2 passes leaks in the conducting state of the first or second field-effect transistor 1 or 2, it is shielded by the shielding wire 21, and electromagnetic coupling between the first and second field-effect transistors 1 and 2 is prevented. Thus, isolation between input and output is improved.
Inventors:
Atsushi Takasaka
Application Number:
JP22296597A
Publication Date:
May 09, 2007
Filing Date:
August 06, 1997
Export Citation:
Assignee:
New Japan Radio Co., Ltd.
International Classes:
H01L21/8234; H01L27/088; H01L29/80; H03K17/693; (IPC1-7): H01L21/8234; H01L27/088; H01L29/80; H03K17/693
Domestic Patent References:
| JP9023101A | ||||
| JP8172163A |