Title:
SINGLE WAFER HEAT-TREATING APPARATUS
Document Type and Number:
Japanese Patent JP3130009
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a single-wafer heat-treating device, with a simple structure, which can improve in-plane uniformity of the temperature of an object to be treated without making the structure complicated or increasing the cost.
SOLUTION: In a single wafer heat-treating apparatus which performs a prescribed heat treatment on an object W to be treated, placed on a pedestal 16 incorporating a heater 24 in a treatment vessel 4 constituted in such a way that the vessel 4 can be evacuated, a heat compensating member 66 which compensates the heat which escapes outward from the peripheral edge section of the rear surface of the pedestal 16 is installed to the peripheral edge section. Therefore, the in-plane uniformity of the temperature of the object W can be improved with a simple structure, without making the structure complicated increasing the cost.
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Inventors:
Wataru Ohkase
Masaaki Hasei
Masaaki Hasei
Application Number:
JP30478298A
Publication Date:
January 31, 2001
Filing Date:
October 12, 1998
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/22; F27D5/00; F27D7/02; H01L21/205; H01L21/31; (IPC1-7): H01L21/31; H01L21/205; H01L21/22
Domestic Patent References:
| JP9306921A | ||||
| JP5198516A | ||||
| JP864544A |
Attorney, Agent or Firm:
Akihiro Asai
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