SLURRY FOR CHEMICAL AND MECHANICAL POLISHING (CMP), METHOD OF PRODUCING SEMICONDUCTOR DEVICE, APPARATUS FOR PRODUCING SEMICONDUCTOR DEVICE AND METHOD OF HANDLING CMP SLURRY

Title:

SLURRY FOR CHEMICAL AND MECHANICAL POLISHING (CMP), METHOD OF PRODUCING SEMICONDUCTOR DEVICE, APPARATUS FOR PRODUCING SEMICONDUCTOR DEVICE AND METHOD OF HANDLING CMP SLURRY

Document Type and Number:

Japanese Patent JP2003113370

Kind Code:

A

Abstract:

To provide a CMP slurry that can achieve high accurate polishing at a high polishing rate and can be easily stored and readily scrapped, a method of handling the slurry, a method of producing semiconductor devices using the same and an apparatus for producing semiconductor devices by using the same.

The CMP slurry 7 comprises the dispersion medium 25, the polishing particles 18 which are dispersed in the dispersion medium 25 and develop photocatalytic action, when light is radiated and a nonionic surfactant dissolved in the dispersion medium 25.

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Inventors:

MATSUI YUKITERU
YANO HIROYUKI
MINAMI FUKUGAKU

Application Number:

JP2002089951A

Publication Date:

April 18, 2003

Filing Date:

March 27, 2002

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

B24B57/02; B24B37/00; C09G1/02; C09K3/14; C11D3/14; C11D11/00; H01L21/304; H01L21/321; H01L21/768; C11D1/66; (IPC1-7): C09K3/14; B24B37/00; B24B57/02; H01L21/304

Attorney, Agent or Firm:

Takehiko Suzue (6 outside)

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