Title:
SOLAR BATTERY
Document Type and Number:
Japanese Patent JPS58209168
Kind Code:
A
Abstract:
PURPOSE:To produce a solar battery with high conversion efficiency by a method wherein an InGaAs lower cell layer grid-matched with InP substrate, a tunnel junction layer comprising P<+>-N<+> junction of InP, and an InAlAs upper cell layer grid-matched with InP are laminated on an InP substrate in said order. CONSTITUTION:An N type and P type In0.53Ga0.47As layer 9, an InP tunnel junction layer 10 comprising P<+> layer and N<+> layer and an N type In0.52Al0.48As layer 11 are laminated on an N<+> type InP substrate 8 in said order to be epitaxially grown. Next an insulating film 12 is formed on the layer 11 by means of the anode oxidation process and a band-like Au upper electrode 13 is provided on the film 12 while the overall back surface of the substate 8 is coated with an AuGe lower electrode 14. Through these procedures, a depletion layer is formed on the surface of the layer 11 while the electrons excited by absorption of solar light may be immediately transferred to the junction layer 10 due to the internal electric field with holes concentrated upon the interface of said film 12, thereby improving the photoelectric conversion efficiency.
Inventors:
ITOU YOSHIO
YAMAMOTO TAKATOSHI
KATSUI AKINORI
YAMAMOTO TAKATOSHI
KATSUI AKINORI
Application Number:
JP9133282A
Publication Date:
December 06, 1983
Filing Date:
May 31, 1982
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L31/04; H01L31/078; (IPC1-7): H01L31/04
Domestic Patent References:
| JPS571268A | 1982-01-06 |
Attorney, Agent or Firm:
Yoshikazu Tani