Title:
Solar cell manufacturing method
Document Type and Number:
Japanese Patent JP6360250
Kind Code:
B2
Abstract:
In the present invention, a p-type silicon substrate is produced, a solution containing aluminum is misted, and the misted solution is sprayed onto the back surface of the p-type silicon substrate under non-vacuum to form a back surface passivation film made of the aluminum oxide film on the back surface of the p-type silicon substrate. Thereafter, a light irradiation processing in which an interface between the p-type silicon substrate and the back surface passivation film is irradiated with ultraviolet light is performed.
More Like This:
| WO/2020/074497 | OPTOELECTRONIC SENSOR |
| WO/2011/109701 | SOLAR PANEL ASSEMBLY AND METHOD FOR PREPARING THEREOF |
| JP3887420 | Active pixel sensor array with multiple resolution readout |
Inventors:
Takahiro Hiramatsu
Oda
Oda
Application Number:
JP2017504450A
Publication Date:
July 18, 2018
Filing Date:
March 09, 2015
Export Citation:
Assignee:
Toshiba Mitsubishi Electric Industrial Systems Co., Ltd.
International Classes:
H01L31/0216; H01L21/316; H01L31/068; H01L31/18
Domestic Patent References:
| JP2006080474A | ||||
| JP2005029408A | ||||
| JP5259156A | ||||
| JP63206372A |
Foreign References:
| WO2015004767A1 | ||||
| WO2011155635A1 | ||||
| WO2013180855A1 | ||||
| WO2010035313A1 |
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita
Takahiro Arita