To obtain a heterojunction silicon solar cell which suppresses current loss and in-film defects and has high photoelectric conversion efficiency.

The heterojunction silicon solar cell comprises: a single crystal silicon substrate 1 of a first conductivity type; and an intrinsic amorphous silicon layer 21, a microcrystal silicon layer 4, and an amorphous silicon layer 22 having a second conductivity type, which are sequentially laminated on a first main surface 1A of the single crystal silicon substrate. Thus, efficiency deterioration due to in-film hydrogen diffusion can be suppressed without increasing light absorption loss.