Solar cell - Sharp Corporation

Title:

Solar cell

Document Type and Number:

Japanese Patent JP5980059

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To provide a solar cell including a structure capable of inhibiting carrier recombination at a heterointerface of a CIGS photoelectric conversion layer and an InGaZnO amorphous oxide semiconductor layer.SOLUTION: A solar cell comprises: a CIGS photoelectric conversion layer; and two and more amorphous oxide semiconductor layers which are arranged on the CIGS photoelectric conversion layer and contain In, Ga and Zn and have carrier concentrations different from each other. The amorphous oxide semiconductor layer having the lower carrier concentration among the amorphous oxide semiconductor layers having different carrier concentrations from each other is arranged closer to the photoelectric conversion layer than the amorphous oxide semiconductor layer having the higher carrier concentration.

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Inventors:

Hirofumi Yoshikawa
Makoto Izumi
Katsumoto
Koide Naojo
Kenichi Higashi
Yuichi Sano
Kotaro Saito
Kuniyoshi

Application Number:

JP2012196319A

Publication Date:

August 31, 2016

Filing Date:

September 06, 2012

Export Citation:

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Assignee:

Sharp Corporation

International Classes:

H01L31/0749

Domestic Patent References:

JP2009283886A
JP2009076842A
JP2004214300A
JP8088379A

Attorney, Agent or Firm:

Fukami patent office

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