Title:
太陽電池及びそのドープ領域構造、電池モジュール並びに光起電システム
Document Type and Number:
Japanese Patent JP7235916
Kind Code:
B2
Abstract:
The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
Inventors:
Chen Go
Huh Wenri
Qiu Kaifu
Wang Yongqian
Yang Xinqiang
Huh Wenri
Qiu Kaifu
Wang Yongqian
Yang Xinqiang
Application Number:
JP2022097101A
Publication Date:
March 08, 2023
Filing Date:
June 16, 2022
Export Citation:
Assignee:
ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD.
International Classes:
H01L31/0216; H01L31/068
Domestic Patent References:
| JP2018050032A | ||||
| JP2021061395A | ||||
| JP2018093168A | ||||
| JP2015201666A | ||||
| JP2012119537A |
Foreign References:
| EP3579284A1 |
Attorney, Agent or Firm:
Takahiro Ozaki