To provide a practical element or device emitting high-strength far-ultraviolet-ray, with the use of high-purity hexagonal boron nitride single crystal emitting high-strength short wave-length ultraviolet rays, reflecting inherent characteristics completely free from effect of impurities.
An ultraviolet-ray emitting layer made of high-purity hexagonal born nitride crystal emitting far-ultraviolet-ray having a sole emission peak in the vicinity of a wavelength of 215 nm and a means for exciting the ultraviolet-ray emitting layer are sealed in a vacuum vessel, and the far-ultraviolet-ray emitted from the ultraviolet-ray-emitting layer excited by the exciting means is to be oscillated and emitted outside through a window provided at the vacuum vessel.
TANIGUCHI TAKASHI
KOIZUMI SATOSHI
YAMADA TAKATOSHI
MILOS NESLADEK
| JP2004035301A | 2004-02-05 | |||
| JPH0689075A | 1994-03-29 | |||
| JPH0855564A | 1996-02-27 | |||
| JP2001266736A | 2001-09-28 | |||
| JP2004192963A | 2004-07-08 |
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