Title:
Solid imaging device
Document Type and Number:
Japanese Patent JP6021439
Kind Code:
B2
Abstract:
A solid-state image sensor comprising a photoelectric conversion portion, a MOS transistor, a first insulating layer, a second insulating layer whose refractive index is higher than that of the first insulating layer, and a light-guiding portion including a first portion and a second portion formed on the first portion, wherein an angle that the side face of the first portion makes with a plane parallel to a light-receiving face of the photoelectric conversion portion is smaller than an angle that a side face of the second portion makes with the parallel plane, and a boundary between the first portion and the second portion is positioned higher than an upper face of a gate electrode of the MOS transistor, and lower than a boundary between the first insulating layer and the second insulating layer.
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Inventors:
Kentaro Suzuki
Yukihiro Hayakawa
Yukihiro Hayakawa
Application Number:
JP2012120137A
Publication Date:
November 09, 2016
Filing Date:
May 25, 2012
Export Citation:
Assignee:
Canon Inc
International Classes:
H01L27/14; H01L27/146
Domestic Patent References:
JP2010205952A | ||||
JP2004221532A | ||||
JP2006179903A | ||||
JP2012186396A | ||||
JP2008085174A | ||||
JP2008218650A | ||||
JP5283661A | ||||
JP2009272568A | ||||
JP2009170937A |
Attorney, Agent or Firm:
Yasunori Otsuka
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura
Osamu Shimoyama
Nagakawa Yukimitsu
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura
Osamu Shimoyama
Nagakawa Yukimitsu