Title:
SOLID MEMORY AND MEMORY FORMING METHOD
Document Type and Number:
Japanese Patent JPH11224483
Kind Code:
A
Abstract:
To provide an easy-to-manufacture solid memory with a high memory density which does not require accurate alignment.
In a solid memory 130, writing is performed by coupling one set of conductors 20-28 to arrays of magnetic memory cells 40-50. Since magnetic layers of the magnetic memory cells 40-50 are also pattern-formed by a process step for pattern-forming the conductors 20-28 in this solid memory 130, accurate alignment between a pattern and a mask is not required. Further, as the magnetic memory cells 40-50 are not required to be formed on a single crystal semiconductor substrate, there is almost no restrictions peculiar to a substrate.
Inventors:
BRUG JAMES A
TRAN LUNG T
ANTHONY THOMAS C
BHATTACHARYYA MANOJ K
NICKEL JANICE
TRAN LUNG T
ANTHONY THOMAS C
BHATTACHARYYA MANOJ K
NICKEL JANICE
Application Number:
JP31278298A
Publication Date:
August 17, 1999
Filing Date:
November 04, 1998
Export Citation:
Assignee:
HEWLETT PACKARD CO
International Classes:
G11C11/15; G11C11/16; H01L21/8246; H01L27/105; H01L27/22; H01L43/08; (IPC1-7): G11C11/15
Attorney, Agent or Firm:
Hideo Ueno
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