To provide a solid-state image pickup with improved sensitivity by improving the condensing efficiency of photodiode by solving the problem of the tendency to reduce the are per pixel, in association with a request of enhancing the pixel or the like, and to provide a method for manufacturing the same.

The method for manufacturing the solid-state image pickup sensor comprises the steps of forming an insulating film 5 having a surface inclined so that at an opening side is lowered at the periphery of the opening on a light-shielding metal film 3, having an opening above a photodiode 12, and further forming a reflecting metal film 6 having an opening above the photodiode 12. Thus, an external light 21 is condensed to the photodiode 12 by the reflecting metal film.