PURPOSE: To obtain an infrared ray solid-state image pickup element having a small charge loss and a sufficient transfer efficiency even at a low temperature operation required to drive the infrared ray solid-state image pickup element.

CONSTITUTION: At first a dummy charge 16a is given to a potential well 14 of an SCCD 17. Then the dummy charge 16a is transferred to a potential well 13 and a signal charge 11a is given to the empty potential well 14. Furthermore, the dummy 16b and the signal charge 11b are sequentially given to the SCCD 17. As a result, since the charge loss attending with capture of the signal charge is reduced, the transfer efficiency of the signal charge is improved.