PURPOSE: To prevent the reduction of an yield resulting from an increase in a packaging density, by providing outside a semiconductor substrate an overflow drain diode composed of a semiconductor thin film and a light-shielding electrode.

CONSTITUTION: In the state (a) in the figure, electrons 30 generated by a photodiode 21 are in a small number, and consequently a rise in energy in the N+ layer of the photodiode 21 is small. Therefore the electrons 30 do not flow over a barrier of an overflow drain diode 27, but all of them are accumulated. In the state (b), on the other hand, electrons 31 generated by the photodiode 21 are in a large number, and consequently the rise in energy in the N+ layer of the photodiode 21 is large. Therefore part of surplus electrons 32 flow over the barrier of the overflow drain diode 27 easily toward the outside through a second electrode 272. The height of this barrier can be adjusted by an external bias 29, and so it turns possible to control blooming. This constitution enables the enhancement of the sensitivity to an infrared wavelength and the reduction of the relative difficulty in rules of design and processes of manufacture.