To provide a solid state image sensor in which a signal is read easily, an element is isolated reliably by an element isolation part, and the number of saturation storage electrons of an N type photodiode is increased by a simple manufacturing process while minimizing a dark current generated from the element isolation part.
The depth of a trench isolation part 5 for isolating a photoelectric conversion element part 3 and a signal scanning circuit part 4 is set equal to 1/8-1/2 of the depth of a trench isolation part 7 for isolating between the elements by a peripheral circuit forming region 7 thus making the depth of the trench isolation part 5 in a pixel forming region 6 shallower. Consequently, the width of the trench isolation part 5 can be reduced. The trench isolation part 5 does not project from the surface of the substrate as in the past. Furthermore, the depth of an N type charge storage region where the impurity concentration of the photoelectric conversion element part 3 is maximized is shallower than the depth of the trench isolation part 5.
KUNIMORI AKIYUKI
OTSUBO KAZUO
| JP2007036118A | 2007-02-08 | |||
| JP2009272596A | 2009-11-19 | |||
| JP2001345439A | 2001-12-14 | |||
| JP2005197605A | 2005-07-21 |
Takaaki Yasumura
Takeshi Oshio
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