To provide a solid-state imaging apparatus that relieves a blooming phenomenon caused by allowing charge overflowing from a thin-out row to leak into a read operation row in thin-out read, and can maintain satisfactory image quality.
A transfer pulse TRG to be supplied to a transistor for read selection is set to be anti-blooming potential so that the charge overflowing at the charge generation section of the thin-out row can be easily transferred to the floating diffusion side of the thin-out row in a thin-out read mode. As the anti-blooming potential, intermediate potential M between L and H levels is used. A potential barrier at the charge generation section of the thin-out row is lowered as compared with a case where the normal L level is applied, thus easily discharging unnecessary charge collected at the charge generation section of the thin-out row and overflowed into an adjacent row to the floating diffusion side, and hence reducing blooming to the unit pixel of an adjacent read row.
SUZUKI RYOJI
FUJITA NORITAKA
KAMOGAWA SATSUKI
| JP2007104386A | 2007-04-19 | |||
| JP2000350103A | 2000-12-15 |
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