To provide a solid-state imaging device for suppressing the deterioration of sensitivity with the miniaturization of a photodiode, while reducing a dark current.
A transfer gate part 16 composed of a gate insulating film 7 and a gate electrode 8 is formed above a charge storage part 3 which is formed by being embedded in a semiconductor substrate 1. A charge detecting part 10 is formed above the charge storage part 3 and on the surface of the semiconductor substrate 1 which is adjacent to one end of the transfer gate part. An embedded insulating film 9 is formed below the charge detecting part 10 and above the charge storage part 3 in the semiconductor substrate 1. The embedded insulating film 9 is formed in the semiconductor substrate 1 by extension to the lower region (a channel region) of the transfer gate part.
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Seki Kei
Yasuya Sugiura