To reduce random noise and unevenness within a surface when resetting in the case of driving for reading out a reset level after readout of a signal level, and to reduce image quality deterioration upon reset operation.

A pixel structure that carries out an operation for reading out a reset level after readout of a signal level, and reduces the impurity concentration of at least a part of a reset transistor 23 side of an FD part 26 to deplete the reset transistor 23 side of the FD part 26, is supposed. In addition, during a period in which the reset transistor 23 for resetting the FD part 26 is turned on, a drain voltage VRD of the reset transistor 23 is transited from a voltage Vrstl lower than a depletion potential to a voltage Vrsth higher than the depletion potential.