Title:
SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE
Document Type and Number:
Japanese Patent JP2021153161
Kind Code:
A
Abstract:
To improve characteristics of a solid-state imaging device.SOLUTION: A photoelectric conversion region that performs photoelectric conversion is formed in each pixel of a semiconductor substrate, and a well contact that supplies a prescribed potential to a well region adjacent to the photoelectric conversion region is disposed in a position overlapping the photoelectric conversion region in a direction orthogonal to a depth direction of the semiconductor substrate. A contact region having a higher impurity concentration than that of the well region is formed in a portion where a wiring member of the well contact is in contact with the well region. This present technology is applicable to, for example, a back-illuminated CMOS image sensor.SELECTED DRAWING: Figure 4
Inventors:
MATSUYAMA SHOTA
Application Number:
JP2020053696A
Publication Date:
September 30, 2021
Filing Date:
March 25, 2020
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP
International Classes:
H01L27/146
Attorney, Agent or Firm:
Takashi Nishikawa
Yoshio Inamoto
Yusuke Miura
Yoshio Inamoto
Yusuke Miura