Title:
SOLUTION GROWTH METHOD, PEDESTAL, AND PRODUCTION METHOD OF SINGLE CRYSTAL SiC
Document Type and Number:
Japanese Patent JP2019023147
Kind Code:
A
Abstract:
To provide a pedestal mounted on a SiC seed crystal, when performing a solution growth method; and to provide a constitution capable of improving a growth rate of single crystal SiC.SOLUTION: In a solution growth method, an epitaxial layer is grown on a SiC seed crystal in the state where the SiC seed crystal comprising single crystal SiC is supported on a pedestal or in the state where a solution containing at least Si and C is brought into contact therewith. At least a part of the pedestal, having a contact with the SiC seed crystal, is made of graphite. Hereby, generation of a fine crystal of SiC on the pedestal becomes difficult in comparison with, for example, the case of using a pedestal made of SiC. Therefor, since inhibition of growth of the epitaxial layer becomes difficult, the epitaxial layer can be grown quickly.SELECTED DRAWING: Figure 3
Inventors:
YABUKI NORITO
UEHARA JUNICHI
NOGAMI AKIRA
TORIMI SATOSHI
UEHARA JUNICHI
NOGAMI AKIRA
TORIMI SATOSHI
Application Number:
JP2015242940A
Publication Date:
February 14, 2019
Filing Date:
December 14, 2015
Export Citation:
Assignee:
TOYO TANSO CO
International Classes:
C30B29/36; C30B19/06
Attorney, Agent or Firm:
Naomi Katsura River