SPUTTERING APPARATUS AND SPUTTERING METHOD

Title:

SPUTTERING APPARATUS AND SPUTTERING METHOD

Document Type and Number:

Japanese Patent JPH11328627

Kind Code:

A

Abstract:

To provide a sputtering apparatus and a sputtering method whereby the composition of a thin film can be adjusted to a desired value.

A sputtering apparatus 1 for forming a thin film on a substrate by sputtering includes a composition analysis device 8 for analyzing the composition of the thin film formed on the substrate 11, and a gas pressure control device 9 for controlling the gas pressure of a sputtering gas in accordance with the analyzed composition of the thin film by the composition analysis device 8. The composition analysis device 8 analyzes the composition of the thin film formed on the substrate in a state where the sputtering is carried out continuously, and the gas pressure control device 9 controls the pressure of the sputtering gas in accordance with the composition of the thin film analyzed by the composition analysis device 8.

Inventors:

TAKADA AKIO
OGAWARA SHIGEHISA
IKEDA SATOSHI

Application Number:

JP13353998A

Publication Date:

November 30, 1999

Filing Date:

May 15, 1998

Export Citation:

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Assignee:

SONY CORP
ULVAC CORP

International Classes:

C23C14/34; C23C14/54; G11B5/39; H01F10/08; H01F10/32; H01F41/18; H01F41/30; H01L21/203; H01L43/12; (IPC1-7): G11B5/39; C23C14/34; C23C14/54; H01F41/18; H01L21/203; H01L43/12

Attorney, Agent or Firm:

Akira Koike (2 outside)

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