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Patent Searching and Data


Title:
SPUTTERING METHOD
Document Type and Number:
Japanese Patent JPS58207942
Kind Code:
A
Abstract:

PURPOSE: To stabilize a sputtering film, while inhibiting the temp.-rising of a substrate, by arranging targets having the components of a thin film to be formed on the substrate oppositely to each other as a set in a vacuum chamber, and providing the substrate along a direction vertical to the targets.

CONSTITUTION: Targets 13, 14 made of Parmalloy are arranged oppositely to each other inside a chamber 11 of high vacuum-degree. Potential distribution is formed between the targets 13, 14 and shielding plates 15, 16. The targets 13, 14 are connected through transformers 17, 18 to DC power sources 19, 20, respectively. AC voltage phase-advanced by a coil 22 is impressed through the transformer 18 onto DC voltage formed from the DC power source 20 by an AC power source 21. After the interior of the vacuum chamber is evacuated up to a vacuum degree of about 10-6Torr, Ar gas is introduced until the interior of the chamber is held at a vacuum degree of 10-2Torr.


Inventors:
MIYAZAKI MASAHIRO
Application Number:
JP9080582A
Publication Date:
December 03, 1983
Filing Date:
May 27, 1982
Export Citation:
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Assignee:
FUJITSU LTD
International Classes:
C23C14/34; B01J19/08; (IPC1-7): B01J19/08; C23C15/00
Attorney, Agent or Firm:
Koshiro Matsuoka